Intermediate valence to Kondo behaviour in Ce (Pt1 - x Irx)2 Si2 (0 ≤ x ≤ 1)

Physica B: Condensed Matter

Volumn 404, Issue 19, 2009, Pages 2992-2994

  Tchoula Tchokonte M B ^a   du Plessis, P de V ^b,c   Kaczorowski, D ^d  

^a UNIVERSITY OF THE WESTERN CAPE   (South Africa)

^b UNIVERSITY OF THE WITWATERSRAND   (South Africa)

^c UNIVERSITY OF JOHANNESBURG   (South Africa)

^d INSTITUTE OF LOW TEMPERATURE AND STRUCTURE RESEARCH   (Poland)

Author keywords

Ce (Pt1 x Irx)2 Si2; Intermediate valence; Kondo alloys; Magnetic susceptibility; Resistivity

Indexed keywords

ALLOY SYSTEM; CE (PT1 - X IRX)2 SI2; CURIE-WEISS BEHAVIOUR; HIGH TEMPERATURE; INTERMEDIATE TEMPERATURES; INTERMEDIATE VALENCE; KONDO ALLOYS; KONDO LATTICES; METAMAGNETIC; POLYCRYSTALLINE; RESISTIVITY; UNIT-CELL VOLUME; VALENCE FLUCTUATIONS; VALENCIES; XRD;

CELL MEMBRANES; CERIUM; CERIUM COMPOUNDS; IRIDIUM; MAGNETIC SUSCEPTIBILITY; PLATINUM; SILICON; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SILICON ALLOYS;

EID: 70349135506     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.07.015     Document Type: Article

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