Hall effect and magnetoresistance in MnSi

Physica B: Condensed Matter

Volumn 404, Issue 19, 2009, Pages 3163-3166

  Neubauer, A ^a   Pfleiderer, C ^a   Ritz, R ^a   Niklowitz, P G ^a,b   Boni P ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF LONDON   (United Kingdom)

Author keywords

Hall effect; Itinerant magnetism; Magnetoresistance

Indexed keywords

ITINERANT MAGNETISM; ROOM TEMPERATURE; SOFT MAGNETICS; TRANSITION TEMPERATURE; TRANSVERSE MAGNETORESISTANCE;

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTROMAGNETS; GYRATORS; HALL EFFECT; MAGNETISM; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE COMPOUNDS;

MAGNETIC FIELD EFFECTS;

EID: 70349094847     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.07.055     Document Type: Article

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