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Volumn 80, Issue 7, 2009, Pages

Large photoconductivity and light-induced recovery of the insulator-metal transition in ultrathin La0.7 Ce0.3 MnO3-δ films

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EID: 70249148551     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.075106     Document Type: Article
Times cited : (22)

References (35)
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    • In order to estimate the magnitude of sample heating we assume one-dimensional heat conduction from the sample surface towards its rear side. The temperature difference ΔT between surface and rear side can be calculated as ΔT= Pl λA with P being the incident light power, l the sample thickness (here: 0.5 mm), A the illuminated area (here: 5× 10-3 mm2 for the unexpanded laser beam), and λ the heat conductivity of SrTiO3 [10W K-1 m-1 in the range between 100 and 300 K (Ref.)]. At a laser power of 100 mW our estimation gives a temperature difference of 1 K.
    • In order to estimate the magnitude of sample heating we assume one-dimensional heat conduction from the sample surface towards its rear side. The temperature difference ΔT between surface and rear side can be calculated as ΔT= Pl λA with P being the incident light power, l the sample thickness (here: 0.5 mm), A the illuminated area (here: 5× 10-3 mm2 for the unexpanded laser beam), and λ the heat conductivity of SrTiO3 [10W K-1 m-1 in the range between 100 and 300 K (Ref.)]. At a laser power of 100 mW our estimation gives a temperature difference of 1 K.
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    • To ensure that there is no metallic phase below 80 K the sample was later transferred into a liquid-helium cryostat for a resistivity measurement at lower temperatures: no phase transition was observed down to 5 K.
    • To ensure that there is no metallic phase below 80 K the sample was later transferred into a liquid-helium cryostat for a resistivity measurement at lower temperatures: no phase transition was observed down to 5 K.
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    • The photon flux Φ= P hν, with P being the incident power at the sample surface, is proportional to Pλ. In our measurement we used a value of Pλ=1260mWnm, which corresponds, for example, to an incident light power of 2.1 mW at a wavelength of 600 nm.
    • The photon flux Φ= P hν, with P being the incident power at the sample surface, is proportional to Pλ. In our measurement we used a value of Pλ=1260mWnm, which corresponds, for example, to an incident light power of 2.1 mW at a wavelength of 600 nm.
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    • Note that the value of 500 nm is somewhat arbitrary because the influence of the substrate grows continuously towards shorter wavelengths. However, for the discussion it is convenient to distinguish two different regimes of the photoresponse behavior.
    • Note that the value of 500 nm is somewhat arbitrary because the influence of the substrate grows continuously towards shorter wavelengths. However, for the discussion it is convenient to distinguish two different regimes of the photoresponse behavior.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.