Optical gain at the F-band of oxidized silicon nanocrystals

Journal of Physics D: Applied Physics

Volumn 42, Issue 13, 2009, Pages

  Dohnalova K ^a   Zidek K ^a,b   Ondic L ^a,b   Kusova K ^a   Cibulka, O ^a   Pelant, I ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b CHARLES UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIED SPONTANEOUS EMISSIONS; EXCITATION INTENSITY; NANOSECOND LASER PULSE; OXIDIZED SILICON; SPECTRAL NARROWING; TIME-RESOLVED; TIME-SCALES; VARIABLE STRIPE LENGTH TECHNIQUES;

OPTICAL GAIN; PULSED LASER APPLICATIONS; PUMPING (LASER); SILICON OXIDES;

LASER EXCITATION;

EID: 70249142209     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/13/135102     Document Type: Article

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