EBDW technology for EB shuttle at 65nm node and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Maruyama, T ^a   Takakuwaa, M ^a   Kojima, Y ^a   Takahashia, Y ^a   Yamada, K ^a   Kon, J ^b   Miyajima, M ^b   Shimizu, A ^b   Machida, Y ^b   Hoshino, H ^b   Takit, H ^b   Sugatani, S ^a   Tsuchikawa, H ^a  

^a e Shuttle Inc   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

300mm; 65nm; BLOCK EXPOSURE; Character projection; Collapse; EBDW; MASTER BLOCK; PARTIAL BLOCK; Resist sensitivity; Roughness

Indexed keywords

300MM; 65NM; BLOCK EXPOSURE; CHARACTER PROJECTIONS; COLLAPSE; EBDW; MASTER BLOCK; PARTIAL BLOCKS; RESIST SENSITIVITY;

LOGIC DEVICES; MANUFACTURE; NANOTECHNOLOGY; PROFITABILITY; REUSABILITY; TECHNOLOGY;

ELECTRON BEAM LITHOGRAPHY;

EID: 70249117335     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772469     Document Type: Conference Paper

References (5)

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3. K. Kojima et al., Proc. SPIE 6519 (2007)51.
4. H. Tsubaki et al., Proc. SPIE 6519 (2007)46.
5. H. Hoshino, K. Ogino, M. Osawa, Y. Machida, and H. Arimoto, "3D Proximity Effect Correction for Multilayer Structures in EB Lithography", CPL Workshop 23 September 2005.