Reliability of flash memory erasing operation under high tunneling electric fields

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 216-221

  Chimenton, Andrea ^a   Olivo, Piero ^a  

^a UNIVERSITY OF FERRARA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE INJECTION; ELECTRIC FIELDS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY;

HIGH ELECTRIC FIELDS; HOLE INJECTION;

FLASH MEMORY;

EID: 70249113645     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315326     Document Type: Conference Paper

References (7)

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2. C. Dunn, C. Kaya, T. Lewis, T. Strauss, J. Schreck, P. Hefley, M. Middendorf and T. San, "Flash EPROM disturb mechanisms", in Proc. Int. Ret. Phys. Symp., p. 299 (1994).
3. A. Chimenton and P. Olivo,"Erratic Bits in Flash Memories under Fowler-Nordheim programming", in Jpn. Journal of Appl. Phys., Vol. 42, N., 4B, p. 2041,(2003).
4. A. Chimenton, P. Pellati and P. Olivo, "Constant Charge Erasing Scheme for Flash Memories", in IEEE Trans. El. Dev., Vol. 49, p. 613, (2002).
5. K. Kobayashi, A. Teramoto, M. Hirayama, and Y, Fujita, "Model for the substrate hole current based on diermoionic hole emission from the anode during Fowler-Nordheim electron tunneling in n-channcl metal-oxide-semiconductor field-effect transistor", in Journal ofAppl. Phys., Vol. 77, p. 3277, (1994).
6. A. Chimenton and P. Olivo, "Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme", in Jpn. Journal ofAppl. Phys., Vol. 42, No. 4B, p. 2025, (2003).
7. A. Chimenton, and P. Olivo, "Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories", in Proc of the 32th European Solid-State Device Research Conference (ESSDERC), pp.363-366, (2002).