InP DHBT circuits for 100 Gb/s ethernet applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Weimann, Nils G ^a   Houtsma, V ^a   Baeyens, Y ^a   Weiner, J ^a   Tate, A ^a   Frackoviak, J ^a   Chen, Y K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Amplifier; Demux; HBT; Heterostructure; InP; Mux

Indexed keywords

AMPLIFIER; DEMUX; HBT; HETEROSTRUCTURE; INP; MUX;

ANALOG CIRCUITS; CUTOFF FREQUENCY; INDIUM; INDIUM PHOSPHIDE;

DIGITAL CIRCUITS;

EID: 70149110490     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4702916     Document Type: Conference Paper

References (5)

1. Desurvire, E, "Capacity Demand and Technology Challenges for Lightwave Systems in the Next Two Decades," Lightwave Technology, Journal of , vol.24, no.12, pp.4697-4710, Dec. 2006
2. Duelk, M.; Zirngibl, M., "100 Gigabit Ethernet - Applications, Features, Challenges," INFOCOM 2006. 25th IEEE International Conference on Computer Communications. Proceedings , vol., no., pp.1-5, April 2006
3. Weimann, N.G.; Houtsma V.; Yang Y.; Frackoviak J.; Tate A.; Chen J.; Weiner J.; Lee J.; Baeyens Y.; Chen Y.K., "InP double-hetero bipolar transistor technology for 130 GHz clock speed", Physica Status Solidi C No. 3, Pg. 452-5, 2006
4. Baeyens, Y.; Weimann, N.G.; Houtsma, V.; Weiner, J.; Yang, Y.; Frackoviak, J.; Roux, P.; Tate, A.; Chen, Y.K., "Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth," Microwave Symposium Digest, 2006. IEEE MTT-S International, vol., no., pp.818-821, 11-16 June 2006
5. Houtsma, V.; Weimann, N.G.; Tate, A.; Frackoviak,J.; Chen, Y.K., "InP Single-ended Transimpedance Amplifier with 92-GHz Transimpedance Bandwidth", presented at CSIC 2007, Portland, Oregon.