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Journal of the American Chemical Society

Volumn 131, Issue 18, 2009, Pages 6358-6359

Metallization of the single component molecular semiconductor [Ni(ptdt) 2] under very high pressure

(4) Cui, Hengbo a Brooks, James S a Kobayashi, Akiko b Kobayashi, Hayao b

a Florida State University (United States)

b NIHON UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND-ANVIL CELL; ELECTRICAL RESISTIVITY MEASUREMENTS; FOUR-PROBE; HIGH PRESSURE; IMPROVED METHODS; METALLIC BEHAVIORS; METALLIZATIONS; MOLECULAR SEMICONDUCTORS; SEMICONDUCTING BEHAVIOR; SINGLE COMPONENTS; UNIAXIAL PRESSURES;

CELL MEMBRANES; ELECTRIC CONDUCTIVITY; HIGH PRESSURE ENGINEERING; METALLIZING; NICKEL;

PRESSURE EFFECTS;

ARTICLE; CHEMICAL STRUCTURE; HYDROSTATIC PRESSURE; PRESSURE; ROOM TEMPERATURE; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 70149110415 PISSN: 00027863 EISSN: None Source Type: Journal
DOI: 10.1021/ja901553z Document Type: Article

Times cited : (46)

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