Low-field magnetoresistance of (1 - x)La0.7Ca0.3MnO3 + xAg composites

Journal of Alloys and Compounds

Volumn 484, Issue 1-2, 2009, Pages 12-16

  Phong, P T ^a,b   Khiem, N V ^c   Dai, N V ^b   Manh, D H ^b   Hong, L V ^b   Phuc, N X ^b  

^a Nhatrang Pedagogic College   (Viet Nam)

^b GRADUATE UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

^c Hongduc University   (Viet Nam)

Author keywords

Low field MR; Manganite composites; Spin polarized tunneling

Indexed keywords

CONDUCTION ELECTRONS; CURIE WEISS LAW; LOW-FIELD MAGNETORESISTANCE; LOW-FIELD MR; METAL INSULATOR TRANSITION TEMPERATURE; NANO-SIZE; NANODIMENSIONAL; PHENOMENOLOGICAL MODELS; SPIN POLARIZED TRANSPORT; SPIN-POLARIZED TUNNELING; SURFACE MAGNETIZATIONS; TEMPERATURE DEPENDENCE;

ELECTRIC RESISTANCE; GRAIN BOUNDARIES; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE DISTRIBUTION;

MANGANESE OXIDE;

EID: 70049104006     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.04.094     Document Type: Letter

References (20)

1. Kusters R.M., Singleton J., Keen D.A., McGreevy R., and Hayes W. Physica B 155 (1989) 362
2. von Helmolt R., Wecker J., Holzapfel B., Schultz L., and Samwer K. Phys. Rev. Lett. 71 (1993) 2331
3. Dagotto E., Hotta T., and Moreo A. Phys. Rep. 344 (2001) 1
4. Jonker G.H. Physica 22 (1956) 3707
5. Hwang H.Y., Cheong S.W., Ong N.P., and Batlogg B. Phys. Rev. Lett. 77 (1996) 2041
6. Zener C. Phys. Rev. 82 (1951) 403
7. Awana V.P.S., Tripathi R., Balamurugan S., Kishan H., and Takayama-Muromachi E. Solid State Commun. 140 (2006) 410
8. Lee S., Hwang H.Y., Boris I., Shraiman W.D., Ratcliff I.I., and Cheong S.-W. Phys. Rev. Lett. 82 (1999) 4508
9. Phong P.T., Khiem N.V., Dai N.V., Manh D.H., Hong L.V., and Phuc N.X. Mater. Lett. 63 (2009) 899
10. Pal S., Banerjee A., Chatterjee S., Nigam A.K., Chaudhuri B.K., and Yang H.D. J. Appl. Phys. 94 (2003) 3485
11. Huang Y.H., Huang K.F., Luo F., He L.L., Wang Z.M., Liao C.S., and Yan C.H. J. Solid State Chem. 174 (2003) 257
12. Xiong C.S., Cui Y.F., Xiong Y.H., Pi H.L., Bao X.C., Huang Q.P., Zeng Y., Wei F.F., Zheng C.F., and Zhu J. J. Solid State Chem. 181 (2008) 2123
13. Young S.L., Chen H.Z., Lin C.C., Shi J.B., Horng L., and Shih Y.T. J. Magn. Magn. Mater. 303 (2006) e325
14. Yuan X.B., Liu Y.H., Huang B.X., Wang C.J., and Mei L.M. Solid State Commun. 135 (2005) 170
15. Yuan X.-B., Liu Y.-H., Wang C.-J., and Mei L.-M. J. Phys. D: Appl. Phys. 38 (2005) 3360
16. Li J., Huang Q., Li Z.W., You L.P., Xu S.Y., and Ong C.K. J. Appl. Phys. 89 (2001) 7428
17. Raychadhuri P., Sheshadri K., Taneja P., Bandyopadhyay S., Ayyub P., Nigam A.K., and Pinto R. J. Appl. Phys. 84 (1998) 2048
18. Dey P., and Nath T.K. Phys. Rev. B 73 (2006) 214425
19. Phong P.T., Khiem N.V., Dai N.V., Manh D.H., Hong L.V., and Phuc N.X. Mater. Lett. 63 (2009) 353-356
20. Raychaudhuri P., Nath T.K., Nigam A.K., and Pinto R. Phys. Rev. B 59 (1999) 13919