Diode-pumped dysprosium laser materials

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7325, Issue , 2009, Pages

  Bowman, S R ^a   Condon, N J ^a   O'Connor, S ^a   Rosenberg, A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Diode pumping; Laser materials; Rare earth; Spectroscopy

Indexed keywords

DIODE PUMPING; DIODE-PUMPED; GAN BASED LASER DIODES; LASER MATERIALS; LASER TRANSITION; ROOM TEMPERATURE; UV EXCITATION;

DIODES; DYSPROSIUM; GALLIUM NITRIDE; LASER EXCITATION; LASERS; PUMPS; RARE EARTHS; SEMICONDUCTING GALLIUM; SOLID STATE LASERS;

PUMPING (LASER);

EID: 69949188830     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.819196     Document Type: Conference Paper

References (4)

1. Nakamura S. "First laser diodes fabricated from 111-V nitride based materials," Mat. Sci. and Engineer. B43 258-264 (1997).
2. Okamoto K., Kashiwagi J. Tanaka T. and Kubota M. "Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm" Appl. Phys. Lett. 94, 071105 (2009).
3. Brik M.G., Ishii T., Tkachuk A.M., Ivanova S.E., and Razumova I.K., "Calculations of the transitions intensities in the optical spectra of Dy3+:LiYF4," J. of Alloys and Compounds 374 63-68 (2004).
4. Grunberg P., Hufner S., Orlich E., and Schmitt J. "Crystal Field in Dysprosium Garnets," Phys. Rev. 184(2), 285-293 (1969).