Neutron radiation effects on metal oxide semiconductor (MOS) devices

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 18, 2009, Pages 3032-3036

  Abdul Amir, Haider F ^a   Chik, Abdulah ^a  

^a UNIVERSITI MALAYSIA SABAH   (Malaysia)

Author keywords

In situ; Ionization; MOS and neutron

Indexed keywords

CURRENT GAINS; DEUTERIUM-TRITIUM; DEVICE PERFORMANCE; ELECTRON HOLE PAIRS; ELECTRONIC COMPONENT; ENERGETIC RADIATION; FUSION NEUTRONS; IN SITU; IN-CHANNELS; IN-SITU METHODS; INDUCED DAMAGE; INSULATING LAYERS; METAL OXIDE SEMICONDUCTOR; MODERN MICROELECTRONICS; MOS AND NEUTRON; MOS STRUCTURE; N-CHANNEL; NEUTRON DISPLACEMENT; NEUTRON FLUENCES; NEUTRON RADIATION EFFECTS; NEUTRON RADIATIONS; OPERATING LIFE; PERMANENT DAMAGE; RECOIL ATOMS;

DEGRADATION; DEUTERIUM; EXCITONS; FIELD EFFECT TRANSISTORS; IONIZATION; IONIZING RADIATION; METALLIC COMPOUNDS; MICROELECTRONICS; MOS DEVICES; NEUTRONS; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON OXIDES; STRUCTURAL METALS; TRITIUM;

NEUTRON IRRADIATION;

EID: 69949178824     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.06.051     Document Type: Article

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