High performance 256×256 pixel LWIR QDIP

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7298, Issue , 2009, Pages

  Nagashima, M ^a   Kibe, M ^a   Doshida, M ^a   Yamashita, H ^b   Suzuki, R ^b   Uchiyama, Y ^b   Matsukura, Y ^b   Nishino, H ^b   Fujii, T ^b   Miyazaki, S ^b  

^a Ministry of Defense   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Escape barrier; Photoluminescence; QDIP; Quantum efficiency

Indexed keywords

CONDUCTION BAND EDGE; DOT DENSITY; ENERGY REGIONS; EPITAXIALLY GROWN; ESCAPE BARRIER; FRAME RATE; GAAS; HIGH SENSITIVITY; HIGH-SPEED OPERATION; HIGHER TEMPERATURES; INCIDENT LIGHT; INFRARED FOCAL PLANE ARRAYS; INTERMEDIATE LAYERS; IR IMAGES; LONG-WAVELENGTH INFRARED; NOISE EQUIVALENT TEMPERATURE DIFFERENCE; OPTICAL GRATING; QDIP; QUANTUM DOT INFRARED PHOTODETECTOR; QUANTUM LEVELS; QUANTUM WELL INFRARED PHOTODETECTORS; RESPONSE PEAK WAVELENGTH; RESPONSIVITY; SELF ASSEMBLED QUANTUM DOTS; TRANSITION LEVEL;

ELECTRON MOBILITY; INFRARED DETECTORS; INFRARED RADIATION; MULTILAYERS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTOLUMINESCENCE; PIXELS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 69949174853     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.822892     Document Type: Conference Paper

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