Evaluation of EUVL mask defect inspection using 199-nm inspection tool with super-resolution method

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7379, Issue , 2009, Pages

  Shigemura, Hiroyuki ^a   Amano, Tsuyoshi ^a   Nishiyama, Yasushi ^a   Suga, Osamu ^a   Arisawa, Yukiyasu ^a   Hashimoto, Hideaki ^b   Takahara, Kenichi ^b   Usuda, Kinya ^b   Kikuiri, Nobutaka ^c   HIrano, Ryoichi ^c  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b NUFLARE TECHNOLOGY INC   (Japan)

^c Advanced Mask Inspection Technology Inc   (Japan)

Author keywords

199nm; EUVL mask; Hp 32nm node; Mask defect; Mask inspection; Polarization

Indexed keywords

199NM; EUVL MASK; HP-32NM NODE; MASK DEFECT; MASK INSPECTION; DEFECT INSPECTION SYSTEM; FURTHER DEVELOPMENT; HP-27NM NODE; ILLUMINATION CONDITIONS; INSPECTION SYSTEM; INSPECTION TOOLS; LEADING EDGE; LINE-AND-SPACE PATTERNS; MASK DEFECTS; OPTIMUM SENSITIVITY; P-POLARIZED; POLARIZED ILLUMINATION; PROGRAMMED DEFECT MASKS; SUPERRESOLUTION METHODS;

DEFECT STRUCTURES; EXTREME ULTRAVIOLET LITHOGRAPHY; FINITE DIFFERENCE TIME DOMAIN METHOD; INSPECTION EQUIPMENT; MACHINE TOOLS; MASKS; METHOD OF MOMENTS; NANOTECHNOLOGY; OPTICAL CONSTANTS; POLARIZATION; TECHNOLOGY; ANGLE MEASUREMENT; INSPECTION; OPTICS; PHOTOMASKS;

INSPECTION; DEFECTS;

EID: 69949171690     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.824334     Document Type: Conference Paper

References (3)

1. T. Amano, et al, "Evaluation of EUVL-mask pattern defect inspection using 199-nm inspection optics" SPIE6730, 2007.
2. S. Tamura, et al, "Evaluation of TaSix Absorber Stack with a Novel Buffer for EUVL Mask" EUVL Symposium 2006.
3. T. Yamada, et al, "Development of beta EUV blanks at HOYA" EUVL Symposium 2006.