Leakage-current characteristics of vanadium- and scandium-doped barium strontium titanate ceramics over a wide range of DC electric fields

Acta Materialia

Volumn 57, Issue 17, 2009, Pages 4935-4947

  Bandyopadhyay, S ^a   Liu, S J ^a,b   Tang, Z Z ^a   Singh, R K ^a   Newman, N ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Ceramics; Conductivity; Electrical resistivity

Indexed keywords

ARRHENIUS ACTIVATION ENERGY; BARIUM STRONTIUM TITANATE CERAMICS; BICRYSTAL SUBSTRATES; CERAMIC STRUCTURE; CERAMICS; CONDUCTIVITY; CURRENT CHARACTERISTIC; DC ELECTRIC FIELD; DEEP LEVEL; DISCONTINUOUS CURRENT; DOPED SAMPLE; EFFECTIVE MOBILITIES; ELECTRICAL CONTACTS; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; ELECTRONIC CARRIERS; ELECTRONIC TRANSPORT; ELECTROSTATIC BARRIERS; HOMOEPITAXIAL; IMPURITY CONCENTRATION; IMPURITY DOPING; LIMITING CURRENT; QUASI-EQUILIBRIUM; SPACE-CHARGE-LIMITED; SRTIO; TIO; TRANSPORT CHARACTERISTICS; TRAP FILLING; VANADIUM DOPING;

ACTIVATION ENERGY; BARIUM; BARIUM TITANATE; CERAMIC MATERIALS; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON TRAPS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; POINT DEFECTS; SCANDIUM; STRONTIUM; STRONTIUM COMPOUNDS; THIN FILMS; VANADIUM; VANADIUM ALLOYS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69949143903     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.06.063     Document Type: Article

References (42)

1. Hari Singh N. Handbook of low and high dielectric constant materials and their applications vol. 2 (1999), Academic Press, San Diego (CA) p. 62
2. Dietz G.W., Schumacher M., Waser R., Streiffer S.K., Basceri C., and Kingon A.I. J Appl Phys 82 (1997) 2359
3. Waser R., Baiatu T., and Härdtl K.H. J Am Ceram Soc 73 (1990) 1645
4. Waser R. J Am Ceram Soc 72 (1989) 2234
5. Freiman S.W., and Pohanka R.C. J Am Ceram Soc 72 (1989) 2258
6. Yoon S.H., Lee J.H., Kim D.Y., and Hwang N.M. J Am Ceram Soc 86 (2003) 88
7. Hennings D., and Rosenstein G. J Am Ceram Soc 67 (1984) 249
8. Luo W., Duan W., Louie S.G., and Cohen M.L. Phys Rev B 70 (2004) 214109
9. Liu S., Zenou V.Y., Sus I., Kotani T., van Schilfgaarde M., and Newman N. Acta Mater 55 (2007) 2647
10. Takashima H., Wang R., Kasai N., Shoji A., and Itoh M. Appl Phys Lett 83 (2003) 2883
11. Sugii N., and Takagi K. Thin Solid Films 323 (1998) 63-67
12. Tse Y.Y., Koutsonas Y., Jackson T.J., Passerieux G., and Jones I.P. Thin Solid Films 515 (2006) 1788
13. Landolt Bornstein. Ferroelectrics and related materials III/16, subvolume a: oxides (1981), Springer Verlag, Berlin
14. Basantakumar Sharma H., Sarma H.N.K., and Abhai M. J Appl Phys 85 (1999) 341
15. Itoh J., Park D.C., Ohashi N., Sakaguchi I., Yashima I., Haneda H., and Tanaka J. Jpn J Appl Phys 41 (2002) 3798
16. Yoon S.H., and Kim H. J Appl Phys 92 (2002) 1039
17. Kim J., Lee H., Kim I., and Jin B. J Electroceram 16 (2006) 207
18. Lampert M.A., and Mark P. Current injection in solids (1970), Academic Press, New York
19. Lampert M.A. Phys Rev 103 (1956) 1648
20. Benguigui L. J Phys Chem Solids 34 (1973) 573
21. Saha S., and Krupanidhi S.B. Mater Sci Eng B 57 (1999) 135
22. Wang Y.P., and Tseng T.Y. J Appl Phys 81 (1997) 6762
23. Lin Y.B., and Lee J.Y. J Appl Phys 87 (2000) 1841
24. Lee H., Lee K., Schunke J.N., and Burton L. IEEE Trans Comp Hybrids Manuf Technol 7 (1984) 443
25. Victor P., Ranjith R., and Krupanidhi S.B. J Appl Phys 94 (2003) 7702
26. Waser R. J Am Ceram Soc 74 (1991) 1934
27. Waser R. Solid State Ionics 75 (1995) 89-99
28. Inoue N., Seki J., Kamimae K., Eguchi K., and Arai H. Solid State Ionics 48 (1991) 283
29. Song R., and Yoo H.I. Phys Rev B 61 (2000) 3975
30. Miller A., and Abrahams E. Phys Rev 120 (1960) 745
31. Shklovskii B.I. Sov Phys Semicond 6 (1973) 1053
32. Ridley B.K. Quantum processes in semiconductors (1993), Clarendon Press, Oxford p. 62-63
33. Desu S.B., and Payne D.A. J Am Ceram Soc 73 (1990) 3407
34. Higuchi T., Tsukamoto T., Sata N., Ishigame M., Tezuka Y., and Shin S. Phys Rev B 57 (1998) 6978-6983
35. Raevski I.P., Maksimov S.M., Fisenko A.V., Prosandeyev S.A., Osipenko I.A., and Tarasenko P.F. J Phys Cond Matter 10 (1998) 8015
36. Mizushima K., Tanaka M., and Iida S. J Phys Soc Jpn 32 (1972) 1519
37. Buban J.P., Iddir H., and Ogut S. Phys Rev B 68 (2003) 224105
38. Chiang Y.M., and Takagi T. J Am Ceram Soc 73 (1990) 3278
39. Branwood A., Hughes O.H., Hurd J.D., and Tredgold R.H. Proc Phys Soc Lond 79 (1962) 1161
40. Denk I., Munch W., and Maier J. J Am Ceram Soc 78 (1995) 3265
41. Saha S., and Krupanidhi S.B. J Appl Phys 90 (2001) 1250
42. Maier J., Schwitzgebel G., and Hageman H.J. J Sol State Chem 58 (1985) 1-13