Thermal-flow techniques for sub-35 nm contact-hole fabrication using Taguchi method in electron-beam lithography

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2170-2175

  Li, Te Sheng ^a   Chen, Szu Hung ^b   Chen, Hsuen Li ^c  

^a MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Contact hole; Electron beam lithography; Taguchi method

Indexed keywords

A-THERMAL; ANOVA ANALYSIS; BAKING TEMPERATURE; CDS; CONFIDENCE INTERVAL; CONTACT-HOLE; CRITICAL DIMENSION; CRITICAL FACTORS; DWELL TIME; FLOW PARAMETERS; FLOW PROCESS; FLOW TECHNIQUES; HIGHER TEMPERATURES; HOLE FABRICATION; OPTIMAL PARAMETER SETTINGS; ORTHOGONAL ARRAY; RESIST PATTERN; SIGNAL/NOISE RATIO; THICK RESIST; TIME PERIODS;

ACOUSTIC INTENSITY; ELECTRON BEAM LITHOGRAPHY; OPTIMIZATION; PHOTORESISTS; TAGUCHI METHODS;

EXPERIMENTS;

EID: 69749102939     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.049     Document Type: Article

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