Effect of hole doping on the London penetration depth in Bi2.15 Sr1.85 CaCu2 O8+δ and Bi2.1 Sr1.9 Ca0.85 Y0.15 Cu2 O8+δ

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 2, 2009, Pages

  Anukool, W ^a,b   Barakat, S ^a   Panagopoulos, C ^a,c,d   Cooper, J R ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b CHIANG MAI UNIVERSITY   (Thailand)

^c UNIVERSITY OF CRETE   (Greece)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 69649106108     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.024516     Document Type: Article

References (33)

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