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Volumn 80, Issue 3, 2009, Pages

Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

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EID: 69549126464     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.035313     Document Type: Article
Times cited : (5)

References (27)
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    • This is only valid when τp is weak temperature dependent. We think it is acceptable for a rough estimation since τp in the submonolayer sample is mainly limited by the boundary scattering.
    • This is only valid when τp is weak temperature dependent. We think it is acceptable for a rough estimation since τp in the submonolayer sample is mainly limited by the boundary scattering.


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