Flux growth and low temperature dielectric relaxation in piezoelectric Pb[(Zn1/3Nb2/3)0.91Ti0.09]O 3 single crystals

Crystal Research and Technology

Volumn 44, Issue 9, 2009, Pages 915-924

  Singh, B K ^a   Kumar, K ^a   Sinha, N ^b   Kumar, B ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Crystal growth; Dielectric; Flux; Perovskites; Piezoelectric; X ray diffraction

Indexed keywords

AC CONDUCTIVITY; DIELECTRIC; DIELECTRIC ANALYSIS; DIELECTRIC CONSTANTS; DIPOLE RELAXATION; ENTHALPY OF ACTIVATION; FLUX GROWTH; FLUX METHODS; FLUX RATIO; GROWTH BEHAVIOR; LOW TEMPERATURE RELAXATION; LOW TEMPERATURES; OPTICAL DIELECTRIC CONSTANT; PIEZOELECTRIC; PIEZOELECTRIC CHARGE COEFFICIENT; PYROCHLORES; TEMPERATURE PROFILES; TEMPERATURE REGIONS; THERMODYNAMIC PARAMETER; TRANSITION TEMPERATURE; ZNO;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; CERAMIC CAPACITORS; CRYSTAL GROWTH; CRYSTALLIZATION; DIELECTRIC RELAXATION; DIELECTRIC WAVEGUIDES; DIFFRACTION; GRAIN BOUNDARIES; HYSTERESIS; LEAD; LEAD ALLOYS; NIOBIUM; OXIDE MINERALS; PERMITTIVITY; PEROVSKITE; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; TEMPERATURE; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

SINGLE CRYSTALS;

EID: 69549122554     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200900294     Document Type: Article

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