N2 band oscillator strengths at near-threshold energies

Journal of Chemical Physics

Volumn 131, Issue 8, 2009, Pages

  Huber, Klaus P ^a   Chan, Man Chor ^b   Stark, Glenn ^c   Ito, Kenji ^d   Matsui, Takashi ^d  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^c WELLESLEY COLLEGE   (United States)

^d INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; BAND OSCILLATOR STRENGTHS; BEST APPROXIMATIONS; COLUMN DENSITY; COMPLEX BAND STRUCTURES; CORE-EXCITED STATE; F VALUES; JET CONFIGURATION; OPTICAL DEPTH; RESERVOIR PRESSURES; ROOM TEMPERATURE; STRAIGHT LINES; SUPERSONIC JET EXPANSION; THRESHOLD ENERGY; THRESHOLD REGIONS; VIBRONIC LEVELS;

ABSORPTION; CALIBRATION; JETS; LIGHT ABSORPTION; LIGHT TRANSMISSION; SEMICONDUCTOR QUANTUM DOTS;

ABSORPTION SPECTROSCOPY;

EID: 69549091520     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3211309     Document Type: Article

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