Modulating the surface states of electric field assembled CuO nanowires by electrochemical deposition method

Applied Physics Letters

Volumn 95, Issue 8, 2009, Pages

  Wang, Lixiang ^a   Cheng, Gang ^a   Jiang, Xiaohong ^a   Wang, Shujie ^a   Zhang, Xingtang ^a   Du, Zuliang ^a  

^a HENAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BEFORE AND AFTER; CONTACT PERFORMANCE; CURRENT INCREASE; CURRENT TRANSPORT; ELECTROCHEMICAL DEPOSITION; ELECTRODE STRUCTURE; I - V CURVE; IMAGE FORCE; METAL SEMICONDUCTOR INTERFACE; REVERSE CURRENTS; SCHOTTKY BARRIERS; SURFACE STATE;

COPPER OXIDES; DANGLING BONDS; ELECTRIC FIELDS; ELECTRODEPOSITION; MODULATION; NANOWIRES; REDUCTION; SCHOTTKY BARRIER DIODES; TRANSPORT PROPERTIES;

ELECTRIC WIRE;

EID: 69549084768     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3213551     Document Type: Article

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