Quantification of carbon in Si1-x-yGexCy with uniform profiles

Nuclear Inst. and Methods in Physics Research, B

Volumn 103, Issue 3, 1995, Pages 339-346

  Bair, A E ^a   Atzmon, Z ^a   Russell, S W ^a   Alford, T L ^a   Mayer, J W ^a   Barbour, J C ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 6944244312     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)00614-1     Document Type: Article

References (17)

1. Silicon-based semiconductor heterostructures: column IV bandgap engineering
2. Cross sections for 170.5 ° backscattering of 4He from carbon for 4He energies between 1.6 and 5.0 MeV