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Volumn 84, Issue 2, 2009, Pages 310-314

Effect of indium diffusion on characteristics of CdS films and nCdS/pSi heterojunctions

Author keywords

CdS Si heterojunction; In diffusion; Spray pyrolysis

Indexed keywords

CDS FILMS; CDS/SI HETEROJUNCTION; CONCENTRATION PROFILES; ELECTRON CONCENTRATION; ENERGY BANDGAPS; ENERGY DISPERSIVE X-RAY FLUORESCENCE; ENERGY-BAND DIAGRAM; HEXAGONAL STRUCTURES; IN DIFFUSION; IN-VACUUM; MAXIMUM VALUES; OPTICAL MEASUREMENT; PHOTOVOLTAIC CHARACTERISTICS; PHOTOVOLTAIC PARAMETERS; POLYCRYSTALLINE; SI SUBSTRATES; SPECTRAL RESPONSIVITY; SPRAY-PYROLYSIS TECHNIQUES; THERMAL-ANNEALING;

EID: 69349085199     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.06.061     Document Type: Article
Times cited : (14)

References (11)
  • 11
    • 0011834451 scopus 로고
    • Boltaks B.I. (Ed), Nauka, Leningrad (in Russian)
    • In: Boltaks B.I. (Ed). Compensated silicon (1972), Nauka, Leningrad (in Russian)
    • (1972) Compensated silicon


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.