Structure-composition sensitivity in "Metallic" Zintl phases: A study of Eu(Ga1-xTtx)2 (Tt=Si, Ge, 0≤x≤1)

Journal of Solid State Chemistry

Volumn 182, Issue 9, 2009, Pages 2430-2442

  You, Tae Soo ^a   Zhao, Jing Tai ^b   Pöttgen, Rainer ^c   Schnelle, Walter ^d   Burkhardt, Ulrich ^d   Grin, Yuri ^d   Miller, Gordon J ^a  

^a IOWA STATE UNIVERSITY   (United States)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

^c UNIVERSITY OF MÜNSTER   (Germany)

^d MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

Author keywords

Crystallography; Electronic structure; Polar intermetallics

Indexed keywords

CURIE-WEISS BEHAVIORS; DENSITY OF STATE; DIFFERENT STRUCTURE; EFFECTIVE MAGNETIC MOMENTS; ELECTRONIC CONFIGURATION; ELECTRONIC STRUCTURE CALCULATIONS; EXPERIMENTAL EVIDENCE; FIRST PRINCIPLES ELECTRONIC STRUCTURE; HAMILTONS; INTER-GROWTHS; ISO-ELECTRONIC SERIES; LATTICE PARAMETERS; NEW STRUCTURES; PHASE REGION; POLAR INTERMETALLICS; POLYANIONICS; SI ATOMS; SINGLE CRYSTAL X-RAY DIFFRACTION; SITE OCCUPANCY; SPACE GROUPS; SPLIT SITES; STRUCTURAL TYPE; STRUCTURAL VARIATIONS; STRUCTURE TYPE; TERNARY PHASIS; TYPE STRUCTURES; UNIT-CELL VOLUME; VALENCE ELECTRON; X-RAY ABSORPTION SPECTRUM; ZINTL PHASIS;

ATOMS; CELL MEMBRANES; CHEMICAL ANALYSIS; DIFFRACTION; ELECTROMAGNETIC WAVE ABSORPTION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EUROPIUM; GALLIUM; GERMANIUM; INTERMETALLICS; MAGNETIC MOMENTS; MAGNETIC SUSCEPTIBILITY; MINERALOGY; SILICON; X RAY CRYSTALLOGRAPHY; X RAY DIFFRACTION;

CRYSTAL ATOMIC STRUCTURE;

EID: 69249209687     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2009.06.032     Document Type: Article

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