Electro-optical characterization of Ge-Se-Te glasses

Journal of Non-Crystalline Solids

Volumn 355, Issue 37-42, 2009, Pages 2083-2087

  Zavadil, J ^a   Kostka, P ^b   Pedlikova, J ^b   Zdansky, K ^a   Kubliha, M ^c   Labas, V ^c   Kaluzny, J ^c  

^a INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

^b INSTITUTE OF INORGANIC CHEMISTRY   (Czech Republic)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

Absorption; Chalcogenides; Conductivity; Luminescence; Optical spectroscopy

Indexed keywords

ABSORPTION COEFFICIENTS; ABSORPTION EDGES; BULK GLASS; CONDUCTIVITY; DC ELECTRICAL CONDUCTIVITY; DOPED SAMPLE; ELECTRO-OPTICAL; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; LUMINESCENCE BAND; LUMINESCENCE PEAK; OPTICAL GAP; OPTICAL SPECTROSCOPY; SINGLE ACTIVATION ENERGY; STRONG LUMINESCENCE; TEMPERATURE RANGE; TRANSMISSION SPECTROSCOPY;

ABSORPTION; ACTIVATION ENERGY; ARRHENIUS PLOTS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY OF SOLIDS; ERBIUM; GERMANIUM; HOLMIUM; LIGHT EMISSION; LIGHT TRANSMISSION; OPTICAL CONDUCTIVITY; OPTICAL GLASS; PHASE CHANGE MEMORY; PHOTOLUMINESCENCE; TELLURIUM COMPOUNDS;

ABSORPTION SPECTROSCOPY;

EID: 69149109138     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2008.12.025     Document Type: Article

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