Synthesis and high temperature thermoelectric transport properties of Si-based type-I clathrates

Chinese Physics B

Volumn 18, Issue 7, 2009, Pages 3084-3089

  Shu Kang, Deng ^a,b   Xin Feng, Tang ^b   Run Sheng, Tang ^a  

^a YUNNAN NORMAL UNIVERSITY   (China)

^b WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Synthesis; Thermoelectric materials; Type I clathrate

Indexed keywords

CLATHRATES; GA CONTENT; HIGH ELECTRICAL CONDUCTIVITY; HIGH TEMPERATURE; MELTING METHOD; ROOM TEMPERATURE; SI-BASED; SOLID STATE REACTION METHOD; SPARK PLASMA SINTERING METHOD; SYNTHESIS; TEMPERATURE RANGE; THERMOELECTRIC MATERIALS; THERMOELECTRIC TRANSPORT PROPERTIES; TYPE-I CLATHRATE;

BARIUM; BARIUM COMPOUNDS; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; HYDRATES; SEEBECK COEFFICIENT; SILICON; SMELTING; SPARK PLASMA SINTERING; SYNTHESIS (CHEMICAL); THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; TRANSPORT PROPERTIES;

GALLIUM;

EID: 68949201696     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/7/079     Document Type: Article

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