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Volumn 4, Issue , 2009, Pages

Surface mapping of carrier density in a GaN wafer using a frequency-agile THz source

Author keywords

Carrier density; GaN; Imaging systems; Terahertz spectroscopy

Indexed keywords


EID: 68949191211     PISSN: None     EISSN: 19902573     Source Type: Journal    
DOI: 10.2971/jeos.2009.09012     Document Type: Article
Times cited : (30)

References (9)
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  • 3
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    • 3+doped tin oxides using Fourier transform infrared spectroscopy
    • 3+doped tin oxides using Fourier transform infrared spectroscopy" Appl. Phys. Lett. 89, 143116 (2006).
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    • Terahertz Near-Field Nanoscopy of Mobile Carriers in Single Semiconductor Nanodevices
    • A. J. Huber, F. Keilmann, J. Wittborn, J. Aizpurua, and R. Hillenbrand, "Terahertz Near-Field Nanoscopy of Mobile Carriers in Single Semiconductor Nanodevices" Nano Lett. 8, 3766-3770 (2008).
    • (2008) Nano Lett , vol.8 , pp. 3766-3770
    • Huber, A.J.1    Keilmann, F.2    Wittborn, J.3    Aizpurua, J.4    Hillenbrand, R.5
  • 5
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    • Random Frequency Accessible Broad Tunable Terahertz-Wave Source Using Phase-Matched 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate Crystal
    • H. Ito, K. Suizu, T. Yamashita, A. Nawahara, and T. Sato, "Random Frequency Accessible Broad Tunable Terahertz-Wave Source Using Phase-Matched 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate Crystal" Jpn. J. Appl. Phys. 46, 7321 (2007).
    • (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 7321
    • Ito, H.1    Suizu, K.2    Yamashita, T.3    Nawahara, A.4    Sato, T.5
  • 7
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    • Infrared reflectance studies of bulk and epitaxial-film n-type GaAs
    • R. Holm, J. Gibson, and E. Palik, "Infrared reflectance studies of bulk and epitaxial-film n-type GaAs" J. Appl. Phys. 48, 212 (1977).
    • (1977) J. Appl. Phys. , vol.48 , pp. 212
    • Holm, R.1    Gibson, J.2    Palik, E.3
  • 8
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    • Infrared Lattice Vibrations and Free-Electron Dispersion in GaN
    • A. Barker and M. Ilegems, "Infrared Lattice Vibrations and Free-Electron Dispersion in GaN" Phys. Rev. B 7, 743 (1973).
    • (1973) Phys. Rev. B , vol.7 , pp. 743
    • Barker, A.1    Ilegems, M.2
  • 9
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    • Electron mobilities, Hall factors, and scattering processes of n-type GaN epilayers studied by infrared reflection and Hall measurements
    • Y. Fu, M. Willander, Z.-F. Li, and W. Lu, "Electron mobilities, Hall factors, and scattering processes of n-type GaN epilayers studied by infrared reflection and Hall measurements" Phys. Rev. B 67, 113313 (2003).
    • (2003) Phys. Rev. B , vol.67 , pp. 113313
    • Fu, Y.1    Willander, M.2    Li, Z.-F.3    Lu, W.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.