메뉴 건너뛰기




Volumn 9, Issue 8, 2009, Pages 2940-2945

A nanoelectromechanical single-atom switch

Author keywords

[No Author keywords available]

Indexed keywords

BREAK JUNCTIONS; CONTINUUM MODEL; ELASTIC PROPERTIES; ELECTRODE TIP; ELECTROMECHANICAL PROPERTY; GATE VOLTAGES; NANO-ELECTROMECHANICAL; NANO-SCALE GEOMETRIES; SOURCE-DRAIN; TUNNELING ,; TUNNELING REGIME;

EID: 68949113815     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl901355y     Document Type: Article
Times cited : (64)

References (23)
  • 14
    • 68949093023 scopus 로고    scopus 로고
    • A further reduction of the gap size is hindered by dewetting of the precursor solution at higher dilutions
    • A further reduction of the gap size is hindered by dewetting of the precursor solution at higher dilutions .
  • 17
    • 68949118725 scopus 로고    scopus 로고
    • We note that the gated junctions were usually found to be stable up to gate voltages of 20 V, i.e, beyond the values reported in ref 12. This difference can be attributed to the use of a local gate electrode instead of a common back gate
    • We note that the gated junctions were usually found to be stable up to gate voltages of 20 V, i.e., beyond the values reported in ref 12. This difference can be attributed to the use of a local gate electrode instead of a common back gate.
  • 20
    • 68949142643 scopus 로고    scopus 로고
    • 0, the switching can be modified through a rearrangement of the atoms at the tips of the electrodes.
    • 0, the switching can be modified through a rearrangement of the atoms at the tips of the electrodes.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.