Microwave-driven transitions in two coupled semiconductor charge qubits

Physical Review Letters

Volumn 103, Issue 1, 2009, Pages

  Petersson, K D ^a   Smith, C G ^a   Anderson, D ^a   Atkinson, P ^a,b   Jones, G A C ^a   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b IFW DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVELY COUPLED; CHARGE DETECTORS; CHARGE QUBITS; COUPLED SEMICONDUCTOR; DETUNINGS; DOUBLE DOTS; DOUBLE QUANTUM DOTS; EXCESS ELECTRONS; GAAS/ALGAAS; HAMILTONIAN MODELS; LEVEL STRUCTURE; MICROWAVE RADIATIONS; MICROWAVE-DRIVEN; QUANTUM POINT CONTACT; RESONANT TRANSITION; TWO-LEVEL SYSTEM; TWO-QUBIT; TWO-QUBIT SYSTEM;

CURRENT VOLTAGE CHARACTERISTICS; MICROWAVES; OPTICAL WAVEGUIDES; POINT CONTACTS; QUANTUM CHEMISTRY; QUANTUM OPTICS; RADIATION DETECTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 68649098317     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.103.016805     Document Type: Article

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