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Volumn 19, Issue 3, 2009, Pages 135-139

Process-induced variability of Nb/Al/A10x/Nb junctions in superconductor integrated circuits and protection against it

Author keywords

Hydrogen; Josephson device fabrication; Nb AlOxNb tunnel junctions; Superconducting integrated circuits

Indexed keywords

COMPLEX CIRCUITS; CONTACT HOLES; ELECTRODE LAYERS; FABRICATION PROCESS; GROUND PLANES; HYDROGEN CONCENTRATION; INTERLAYER DIFFUSION; JOSEPHSON DEVICE FABRICATION; JOSEPHSON JUNCTIONS; JUNCTION ELECTRODES; LOCAL ENVIRONMENT EFFECTS; LOCAL VARIATIONS; MULTI-LAYERED STRUCTURE; NB JUNCTIONS; NB/ALOXNB TUNNEL JUNCTIONS; SUPERCONDUCTING INTEGRATED CIRCUITS; SUPERCONDUCTOR INTEGRATED CIRCUIT; TECHNOLOGICAL REGIME; TEST STRUCTURE; TUNNEL BARRIER; WAFER PROCESSING;

EID: 68649083204     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2009.2018253     Document Type: Conference Paper
Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.