Multiferroic Bi0.7Dy0.3FeO3 films as high k dielectric material for advanced non-volatile memory devices

Electronics Letters

Volumn 45, Issue 16, 2009, Pages 821-822

  Prashanthi, K ^a   Duttagupta, S P ^a   Pinto, R ^a   Palkar, V R ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CMOS; DIELECTRIC CONSTANTS; EFFECTIVE OXIDE CHARGE; ELECTRICAL PROPERTY; HIGH DIELECTRIC CONSTANTS; HIGH FREQUENCY CAPACITANCE; HIGH-K DIELECTRIC MATERIALS; INTERFACE STATE DENSITY; MEMORY DEVICE; MULTIFERROICS; NONVOLATILE MEMORY DEVICES; P-TYPE; POTENTIAL APPLICATIONS; PULSED-LASER DEPOSITION TECHNIQUE; SILICON SUBSTRATES; THERMAL STABILITY;

CERAMIC CAPACITORS; DEPOSITION; DIELECTRIC WAVEGUIDES; ELECTRIC POTENTIAL; GATE DIELECTRICS; GATES (TRANSISTOR); IRON OXIDES; PERMITTIVITY; PULSED LASER DEPOSITION;

DIELECTRIC MATERIALS;

EID: 68549113033     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.0712     Document Type: Article

References (12)

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