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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 2044-2047

Hot electron transport studies of the Cu/Si(001) interface using ballistic electron emission microscopy

(5) Garramone, J J a Abel, J R a Sitnitsky, I L a Moore, R L a Labella, V P a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER DEPTH PROFILING; BALLISTIC ELECTRON EMISSION MICROSCOPY; HOT-ELECTRON TRANSPORT; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SCATTERING PROPERTY; SCHOTTKY BARRIER HEIGHTS;

BALLISTICS; DEPTH PROFILING; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HOT ELECTRONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; TRANSPORT PROPERTIES;

ELECTRON EMISSION;

EID: 68349127561 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3136761 Document Type: Article

Times cited : (10)

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