Quaternary semiconductors with positive crystal field splitting: Potential high-efficiency spin-polarized electron sources

Applied Physics Letters

Volumn 95, Issue 5, 2009, Pages

  Chen, Shiyou ^a   Yin, Wan Jian ^a   Yang, Ji Hui ^a   Gong, X G ^a   Walsh, Aron ^b   Wei, Su Huai ^b  

^a FUDAN UNIVERSITY   (China)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOPYRITE STRUCTURES; CRYSTAL-FIELD SPLITTING; FIRST-PRINCIPLES CALCULATION; GAAS; HIGH EFFICIENCY; II-VI TERNARY; KESTERITES; PSEUDO-BINARIES; QUATERNARY SEMICONDUCTORS; SPIN POLARIZED ELECTRON SOURCES; STRUCTURAL FLEXIBILITIES; VALENCE-BAND MAXIMUMS; ZINC-BLENDE;

CHEMICAL COMPOUNDS; COPPER COMPOUNDS; ELECTRON SOURCES; GERMANIUM; GROUND STATE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SINGLE CRYSTALS; SPIN DYNAMICS; TIN; ZINC;

SILVER;

EID: 68349127148     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3193662     Document Type: Article

References (13)

1. Y. A. Mamaev, L. G. Gerchikov, and Y. P. Yashin, Semicond. Sci. Technol. 0268-1242 23, 114014 (2008). 10.1088/0268-1242/23/11/114014
2. D. T. Pierce and F. Meier, Phys. Rev. B 13, 5484 (1976). 10.1103/PhysRevB.13.5484
3. S. -H. Wei, in Proceedings of the Seventh International Workshop on Polarized Gas Targets and Polarized Beams, edited by, R. J. Holt, and, M. A. Miller, (AIP, New York, 1998), p. 284.
4. T. Maruyama, E. L. Garwin, R. Prepost, G. H. Zapalac, J. S. Smith, and J. D. Walker, Phys. Rev. Lett. 0031-9007 66, 2376 (1991). 10.1103/PhysRevLett.66. 2376
5. T. Maruyama, D. -A. Luh, A. Brachmann, J. E. Clendenin, E. L. Garwin, S. Harvey, J. Jiang, R. E. Kirby, C. Y. Prescott, R. Prepost, and A. M. Moy, Appl. Phys. Lett. 0003-6951 85, 2640 (2004). 10.1063/1.1795358
6. Semiconductors: Data Handbook, 3rd ed., edited by, O. Madelung, (Springer, Berlin, 2004).
7. J. E. Rowe and J. L. Shay, Phys. Rev. B 3, 451 (1971). 10.1103/PhysRevB.3.451
8. A. Janotti and S. -H. Wei, Appl. Phys. Lett. 0003-6951 81, 3957 (2002). 10.1063/1.1521510
9. S. -H. Wei and A. Zunger, Phys. Rev. B 0163-1829 49, 14337 (1994). 10.1103/PhysRevB.49.14337
10. S. Chen, X. G. Gong, A. Walsh, and S. -H. Wei, Appl. Phys. Lett. 0003-6951 94, 041903 (2009). 10.1063/1.3074499
11. S. Chen, X. G. Gong, A. Walsh, and S. -H. Wei, Phys. Rev. B 0163-1829 79, 165211 (2009). 10.1103/PhysRevB.79.165211
12. P. Carrier and S. -H. Wei, Phys. Rev. B 0163-1829 70, 035212 (2004). 10.1103/PhysRevB.70.035212
13. J. E. Bernard, L. G. Ferreira, S. H. Wei, and A. Zunger, Phys. Rev. B 0163-1829 38, 6338 (1988). 10.1103/PhysRevB.38.6338