IGBT gate characteristics and parameter extraction methods

Diangong Jishu Xuebao/Transactions of China Electrotechnical Society

Volumn 24, Issue 7, 2009, Pages 76-80

  Tang, Yong ^a   Hu, An ^a   Chen, Ming ^a  

^a NAVAL UNIVERSITY OF ENGINEERING   (China)

Author keywords

Characteristic analysis; Gate; IGBT; Parameter extraction

Indexed keywords

CHARACTERISTIC ANALYSIS; DEVICE APPLICATION; EXTRACTION METHOD; GATE; GATE STRUCTURE; IGBT; NEW PARAMETERS; PARAMETER-EXTRACTION METHOD; PARAMETERS EXTRACTION; POWER ELECTRONICS DEVICES; SEMICONDUCTOR PHYSICS; SIMULATOR MODELS; THEORETIC ANALYSIS; TRENCH GATE STRUCTURES; WORK PRINCIPLE; WORKING CONDITIONS;

BIPOLAR TRANSISTORS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PARAMETER EXTRACTION; POWER ELECTRONICS;

ACTIVE FILTERS;

EID: 68249132220     PISSN: 10006753     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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