A vertical transport geometry for electrical spin injection and extraction in Si

Solid State Communications

Volumn 149, Issue 37-38, 2009, Pages 1565-1568

  Husain, M K ^a   Li, X V ^a   de Groot, C H ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

B. Spin injection; D. Magnetoresistance; D. Schottky barriers

Indexed keywords

B. SPIN INJECTION; CURRENT-VOLTAGE MEASUREMENTS; D. MAGNETORESISTANCE; D. SCHOTTKY BARRIERS; DETECTION EXPERIMENTS; ELECTRICAL SPIN INJECTION; FERROMAGNETIC METAL; HIGH RESISTANCE; LOW TEMPERATURES; NUMERICAL SIMULATION; RESISTANCE-AREA PRODUCTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY JUNCTIONS; SPIN INJECTION; SPIN-POLARIZED CARRIER INJECTION; THERMIONIC FIELD EMISSION; VERTICAL STRUCTURES; VERTICAL TRANSPORTS;

COMPUTER SIMULATION LANGUAGES; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; FIELD EMISSION; GERMANIUM; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; METAL RECOVERY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SILICON;

SPIN DYNAMICS;

EID: 68149131404     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.05.045     Document Type: Article

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