High temperature metal-insulator transition induced by rare-earth doping in perovskite camno3

Journal of Physical Chemistry C

Volumn 113, Issue 28, 2009, Pages 12509-12516

  Wang, Yang ^a   Sui, Yu ^a   Cheng, Jinguang ^a   Wang, Xianjie ^a   Lu, Zhe ^a   Su, Wenhui ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

A-SITE CATIONS; BOND ANGLE; EFFECTIVE BANDWIDTH; ELECTRICAL CONDUCTIVITY; ELECTRON-DOPED; HIGH TEMPERATURE; HIGH-TEMPERATURE TRANSPORT PROPERTIES; PEROVSKITE MANGANITES; PEROVSKITE STRUCTURES; RARE-EARTH DOPING; SPACE GROUPS; SPIN STATE TRANSITION; STRUCTURAL DISTORTIONS; STRUCTURAL PARAMETER; THERMALLY ACTIVATED;

ACTIVATION ENERGY; BOND LENGTH; CALCIUM; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MAGNETIC SUSCEPTIBILITY; MANGANESE; MANGANESE COMPOUNDS; METAL INSULATOR BOUNDARIES; OXIDE MINERALS; PEROVSKITE; POSITIVE IONS; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSPORT PROPERTIES; YTTERBIUM;

METAL INSULATOR TRANSITION;

EID: 68149084915     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp809049s     Document Type: Article

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