Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors

Applied Physics Express

Volumn 2, Issue 6, 2009, Pages

  Sano, Eiichi ^a,c   Otsuji, Taiichi ^b,c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR CHARACTERISTICS; COMPLEMENTARY LOGIC CIRCUITS; GRAPHENE; SOURCE AND DRAIN STRUCTURES;

LOGIC CIRCUITS; SWITCHING CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 67949095952     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.061601     Document Type: Article

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