SCOPUS 정보 검색 플랫폼

Volumn 2, Issue 6, 2009, Pages

Current-field driven "spin transistor"

(7) Konishi, Katsunori a Nozaki, Takayuki a Kubota, Hitoshi b Fukushima, Akio b Yuasa, Shinji b Shiraishi, Masashi a Suzuki, Yoshishige a

a OSAKA UNIVERSITY (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASIC STRUCTURE; CURRENT AMPLIFICATION; FREE LAYERS; INDUCED MAGNETIC FIELDS; LOW RESISTANCE; MAGNETIC TUNNEL JUNCTION; METALLIC WIRE; OPTIMUM CELL; PARASITIC RESISTANCES; POWER AMPLIFICATION; POWER GAINS; ROOM TEMPERATURE; SPIN TRANSISTOR; SPINTRONIC DEVICE;

CELL MEMBRANES; HETEROJUNCTION BIPOLAR TRANSISTORS; MAGNETIC DEVICES; MAGNETIC FIELDS; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; TUNNEL JUNCTIONS; WAVEGUIDE JUNCTIONS;

AMPLIFICATION;

EID: 67949086773 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.2.063004 Document Type: Article

Times cited : (10)

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