Erratum: Increased polarization ratio on semipolar (112̄2) InGaN/GaN light-emitting diodes with increasing indium composition (Japanese Journal of Applied Physics (2007) 47 (7854))

Japanese Journal of Applied Physics

Volumn 48, Issue 4, 2009, Pages

  Fellows, Natalie ^a   Sato, Hitoshi ^a   Masui, Hisashi ^a   DenBaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67849132470     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.049201     Document Type: Erratum

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