Optical and electrical properties of tin-doped cadmium oxide films prepared by electron beam technique

Japanese Journal of Applied Physics

Volumn 48, Issue 4, 2009, Pages

  Ali, H M ^a   Mohamed, H A ^b   Wakkad, M M ^a   Hasaneen, M F ^a  

^a Sohag University   (Egypt)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BAND-TO-BAND TRANSITION; CADMIUM OXIDE; DOPANT RATIO; ELECTRON BEAM EVAPORATION; ELECTRON BEAM TECHNIQUE; MAXIMUM VALUES; OPTICAL AND ELECTRICAL PROPERTIES; POLYCRYSTALLINE; RESISTIVITY VALUES; STRUCTURE CHANGE;

CADMIUM; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON BEAMS; INTEGRATED OPTOELECTRONICS; OPTICAL PROPERTIES; TIN; X RAY DIFFRACTION;

OXIDE FILMS;

EID: 67849118706     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.041101     Document Type: Article

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