Highly efficient monolithic class E SiGe power amplifier design at 900 and 2400 MHz

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 56, Issue 7, 2009, Pages 1455-1466

  Lie, Donald Y C ^a,b   Lopez, Jerry ^a,b   Popp, Jeremy D ^c   Rowland, Jason F ^d   Wang, Guogong ^e,f   Qin, Guoxuan ^e   Ma, Zhenqiang ^e  

^a Dynamic Research Corporation DRC   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

^c Orora Design Technologies Inc ^*  (United States)

^d Naval Command   (United States)

^e University of Wisconsin Madison   (United States)

^f FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Breakdown voltage; Class E; High efficiency; Power amplifier (PA); SiGe heterojunction bipolar transistor (HBT); Swith mode PA; System on a ship (SoC); Wideband; Wireless sensor

Indexed keywords

EFFICIENCY; ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUIT DESIGN; POWER AMPLIFIERS; PROGRAMMABLE LOGIC CONTROLLERS; SILICON; SYSTEM-ON-CHIP; TANKS (CONTAINERS);

CLASS E; HIGH-EFFICIENCY; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR; SYSTEM-ON-A-SHIP (SOC); WIDE-BAND; WIRELESS SENSOR;

SI-GE ALLOYS;

EID: 67651159278     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2008.2010145     Document Type: Article

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