Texture of bismuth telluride-based thermoelectric semiconductors processed by high-pressure torsion

Journal of Physics and Chemistry of Solids

Volumn 70, Issue 7, 2009, Pages 1089-1092

  Ashida, Maki ^a   Hamachiyo, Takashi ^a   Hasezaki, Kazuhiro ^a   Matsunoshita, Hirotaka ^b   Kai, Masaaki ^b   Horita, Zenji ^b  

^a SHIMANE UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

A. Semiconductors; C. Electron microscopy; C. X ray diffraction; D. Electrical conductivity

Indexed keywords

A. SEMICONDUCTORS; BISMUTH TELLURIDE; C. ELECTRON MICROSCOPY; C. X-RAY DIFFRACTION; CRYSTALLOGRAPHIC STRUCTURE; D. ELECTRICAL CONDUCTIVITY; HIGH PRESSURE TORSIONS; NOMINAL COMPOSITION; P-TYPE; POWER FACTORS; PREFERRED ORIENTATIONS; REFINED MICROSTRUCTURE; SEM; THERMOELECTRIC PROPERTIES; THERMOELECTRIC SEMICONDUCTOR; VERTICAL BRIDGMAN METHOD;

BISMUTH; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; DIFFRACTION; DISKS (MACHINE COMPONENTS); DISKS (STRUCTURAL COMPONENTS); ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; ELECTRON MICROSCOPES; MICROSTRUCTURE; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

TORSIONAL STRESS;

EID: 67651030018     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2009.06.002     Document Type: Article

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