Surface chemical modification induces nanometer scale electron confinement in field effect device

Journal of Chemical Physics

Volumn 131, Issue 2, 2009, Pages

  Shalev, Gil ^a   Halpern, Eliezer ^b   Doron, Amihood ^a   Cohen, Ariel ^a   Rosenwaks, Yossi ^b   Levy, Ilan ^a  

^a INTEL CORPORATION   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

3-AMINOPROPYL TRIMETHOXYSILANE; ACCUMULATION LAYERS; ACTIVATION PROCESS; BASIC PROPERTIES; CHANNEL ELECTRONS; ELECTRICAL PROPERTY; ELECTRON CONFINEMENT; ELECTRONIC BEHAVIORS; ELECTRONIC PERFORMANCE; FIELD EFFECT SENSORS; FULLY DEPLETED SILICON-ON-INSULATOR; IN-FIELD; METAL GATE; MOLECULAR ASSEMBLY; MOLECULAR LAYER; MOLECULAR LEVELS; MULTI-DISCIPLINARY RESEARCH; NANO-METER SCALE; NEGATIVE CHARGE; PH SENSITIVITY; PHYSICOCHEMICAL PROPERTY; POST-MODIFICATION; SOI CHANNELS; SOI THICKNESS; SURFACE ACTIVATION; SURFACE CHEMICAL MODIFICATIONS; TRANSISTOR GAIN; VOLUME INVERSION;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); ION SENSITIVE FIELD EFFECT TRANSISTORS; PH SENSORS; PLASMA CONFINEMENT; SENSORS; SILICON COMPOUNDS; SILICON OXIDES;

CHEMICAL MODIFICATION;

EID: 67650733825     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3167414     Document Type: Article

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