Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Koizumi, Atsushi ^a   Suda, Jun ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; ACOUSTIC-PHONON SCATTERING; DOPING DEPENDENCIES; ELECTRICAL PROPERTY; FIELD TRANSPORT; FREE HOLE CONCENTRATION; HALL EFFECT MEASUREMENT; HALL SCATTERING FACTOR; IONIZATION ENERGIES; MOBILITY MODEL; NEUTRAL IMPURITY SCATTERING; NUMERICAL CALCULATION; PHYSICAL MEANINGS; SEMI-INSULATING SUBSTRATE; SIC EPILAYERS; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC COILS; ELECTRIC PROPERTIES; EPITAXIAL LAYERS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE CONCENTRATION; IONIZATION; SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TRANSPORT PROPERTIES;

HOLE MOBILITY;

EID: 67650723448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3158565     Document Type: Article

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