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Journal of Electronic Materials

Volumn 38, Issue 7, 2009, Pages 1418-1422

Transport properties of doped, nanostructured IV-VI epitaxial films grown by MBE

(3) Koenig, J D a Winkler, M a Boettner, H a

a FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM (Germany)

Author keywords

MBE; Nanocomposite; PbTe; Thermoelectric

Indexed keywords

BOLTZMANN STATISTICS; DOPING CONCENTRATION; FTIR; MBE; NANO SCALE; NANO-SCALE INCLUSION; NANO-STRUCTURED; PBTE; SEEBECK EFFECT MEASUREMENTS; THERMAL REFLECTANCE; THERMOELECTRIC; THERMOELECTRIC CHARACTERIZATION; TIME DOMAIN; TRANSMISSION SPECTRUMS;

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METHOD OF MOMENTS; NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; THERMAL CONDUCTIVITY; TIME DOMAIN ANALYSIS; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

EPITAXIAL FILMS;

EID: 67650502426 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0717-3 Document Type: Conference Paper

Times cited : (4)

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