Transmission electron microscopy study of Sn-Doped sintered indium oxide

Materials Transactions

Volumn 50, Issue 5, 2009, Pages 959-963

  Ishikawa, Yoshimitsu ^a   Nagayama, Hitoshi ^a   Hoshino, Hirokuni ^a   Ohgai, Michiharu ^a   Shibata, Naoya ^b,c   Yamamoto, Takahisa ^b   Ikuhara, Yuichi ^b  

^a TOSOH CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Bixbyite structure; Fluorite structure; Precipitate; Tin doped indium oxide

Indexed keywords

BIXBYITE STRUCTURE; FLUORITE STRUCTURE; INDIUM OXIDE; MATRIX; NANO-SIZED PRECIPITATES; NANOBEAM ELECTRON DIFFRACTION; SECONDARY PHASIS; SN-DOPED; STRUCTURAL CHANGE; TIN-DOPED INDIUM OXIDE; VACANCY SITES;

ELECTRON MICROSCOPES; FLUORSPAR; GRAIN BOUNDARIES; INDIUM; INDIUM COMPOUNDS; PHOTOCURRENTS; PRECIPITATES; SINTERING; TIN; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL STRUCTURE;

EID: 67650496620     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.MC200814     Document Type: Conference Paper

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