SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 38, Issue 7, 2009, Pages 1194-1199

The effect of high-pressure sintering process on the microstructure and thermoelectric properties of CoSb 3

(5) Mei, Chao a Li, Yao a Li, Guodong a Li, Mingfa a Zhai, Pengcheng a

a WUHAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

CoSb 3; Grain size; High pressure sintering; Microstructure

Indexed keywords

COSB 3; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; GRAIN SIZE; HIGH-PRESSURE CONDITION; HIGH-PRESSURE SINTERING; METAL IMPURITIES; P-TYPE; SINTERING TEMPERATURES; SKUTTERUDITE; SOLID REACTION METHOD; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; TRANSPORT BEHAVIOR;

ELECTRIC CONDUCTIVITY; GRAIN GROWTH; GRAIN SIZE AND SHAPE; IMPURITIES; MICROSTRUCTURE; PRESSURE EFFECTS; THERMOELECTRIC EQUIPMENT;

SINTERING;

EID: 67650429929 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0736-0 Document Type: Conference Paper

Times cited : (6)

References (12)

1
- 0000481347
- 10.1103/PhysRevB.56.15081
- B.C. Sales D. Mandrus B.C. Chakoumakos V. Keppens J.R. Thompson 1997 Phys. Rev. B 56 15081 10.1103/PhysRevB.56.15081
- (1997) Phys. Rev. B , vol.56 , pp. 15081
- Sales, B.C.¹ Mandrus, D.² Chakoumakos, B.C.³ Keppens, V.⁴ Thompson, J.R.⁵

2
- 6744248869
- 10.1146/annurev.matsci.29.1.89
- G.S. Nolas D.T. Morelli T.M. Tritt 1999 Annu. Rev. Mater. Sci. 29 89 10.1146/annurev.matsci.29.1.89
- (1999) Annu. Rev. Mater. Sci. , vol.29 , pp. 89
- Nolas, G.S.¹ Morelli, D.T.² Tritt, T.M.³

3
- 20544438306
- 10.1063/1.1927702
- G.A. Lamberton Jr. R.H. Tedstrom T.M. Tritt G.S. Nolas 2005 J. Appl. Phys. 97 113715 10.1063/1.1927702
- (2005) J. Appl. Phys. , vol.97 , pp. 113715
- Lamberton, Jr.G.A.¹ Tedstrom, R.H.² Tritt, T.M.³ Nolas, G.S.⁴

4
- 0000580438
- 10.1063/1.363405
- T. Caillat A. Borshchevsky J.-P. Fleurial 1996 J. Appl. Phys. 80 4442 10.1063/1.363405
- (1996) J. Appl. Phys. , vol.80 , pp. 4442
- Caillat, T.¹ Borshchevsky, A.² Fleurial, J.-P.³

5
- 0035881395
- 10.1063/1.1388162
- L.D. Chen T. Kawahara X.F. Tang T. Goto T. Hirai J.S. Dyck W. Chen C. Uher 2001 J. Appl. Phys. 90 1864 10.1063/1.1388162
- (2001) J. Appl. Phys. , vol.90 , pp. 1864
- Chen, L.D.¹ Kawahara, T.² Tang, X.F.³ Goto, T.⁴ Hirai, T.⁵ Dyck, J.S.⁶ Chen, W.⁷ Uher, C.⁸

6
- 0000079699
- 10.1103/PhysRevB.58.164
- G.S. Nolas J.L. Cohn G.A. Slack 1998 Phys. Rev. B 58 164 10.1103/PhysRevB.58.164
- (1998) Phys. Rev. B , vol.58 , pp. 164
- Nolas, G.S.¹ Cohn, J.L.² Slack, G.A.³

7
- 0001503713
- 10.1021/cm9802393
- J.V. Badding J.F. Meng D.A. Polvani 1998 Chem. Mater. 10 2889 10.1021/cm9802393
- (1998) Chem. Mater. , vol.10 , pp. 2889
- Badding, J.V.¹ Meng, J.F.² Polvani, D.A.³

8
- 11844297826
- 10.2320/matertrans.45.3102
- P.W. Zhu Y. Imai Y. Isoda Y. Shinohara X.P. Jia G.Z. Ren G.T. Zou 2004 Mater. Trans. 45 3102 10.2320/matertrans.45.3102
- (2004) Mater. Trans. , vol.45 , pp. 3102
- Zhu, P.W.¹ Imai, Y.² Isoda, Y.³ Shinohara, Y.⁴ Jia, X.P.⁵ Ren, G.Z.⁶ Zou, G.T.⁷

9
- 33846363987
- 10.1103/PhysRevB.75.024105
- A.C. Kraemer M.R. Gallas J.A.H. da Jornada C.A. Perottoni 2007 Phys. Rev. B 75 024105 10.1103/PhysRevB.75.024105
- (2007) Phys. Rev. B , vol.75 , pp. 024105
- Kraemer, A.C.¹ Gallas, M.R.² Da Jornada, J.A.H.³ Perottoni, C.A.⁴

10
- 0033686115
- 10.1016/S0921-5093(00)00773-5
- M. Omori 2000 Mater. Sci. Eng. A 287 183 10.1016/S0921-5093(00)00773-5
- (2000) Mater. Sci. Eng. A , vol.287 , pp. 183
- Omori, M.¹

11
- 35548999309
- 10.1088/0022-3727/40/21/044
- W.S. Liu B.P. Zhang J.F. Li L.D. Zhao 2007 J. Phys. D Appl. Phys. 40 6784 10.1088/0022-3727/40/21/044
- (2007) J. Phys. D Appl. Phys. , vol.40 , pp. 6784
- Liu, W.S.¹ Zhang, B.P.² Li, J.F.³ Zhao, L.D.⁴

12
- 0343450178
- 10.1063/1.103053
- G.Q. Lu E. Nygren M.J. Aziz D. Turnbull 1990 Appl. Phys. Lett. 56 137 10.1063/1.103053
- (1990) Appl. Phys. Lett. , vol.56 , pp. 137
- Lu, G.Q.¹ Nygren, E.² Aziz, M.J.³ Turnbull, D.⁴

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