Si enhances the growth of B4C nanowires

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3721-3725

  Zhu, Ming ^a   Hu, Xiaoyang ^a   Wei, Yingnai ^a   Zhang, Yingjiu ^a,b   Du, Xiwen ^c   Zhang, Xiaozhong ^d  

^a Material Physics Laboratory   (China)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c TIANJIN UNIVERSITY   (China)

^d TSINGHUA UNIVERSITY   (China)

Author keywords

A1. Impurities; A3. Chemical vapor deposition processes; B1. Inorganic compounds; B1. Nanomaterials

Indexed keywords

A1. IMPURITIES; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B1. INORGANIC COMPOUNDS; B1. NANOMATERIALS; ENHANCED GROWTH; IMPURITIES IN;

BORON; BORON COMPOUNDS; CARBON NANOTUBES; CHARCOAL; CHEMICAL VAPOR DEPOSITION; ELECTRIC WIRE; INORGANIC COMPOUNDS; NANOSTRUCTURED MATERIALS; NANOWIRES; SILICON; VAPORS;

ACTIVATED CARBON;

EID: 67650072869     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.028     Document Type: Article

References (21)

1. Iijima S. Nature 354 (1991) 56
2. Hu J.T., Odom T.W., and Lieber C.M. Acc. Chem. Res. 32 (1999) 435
3. Wu Y.Y., Messer B., and Yang P.D. Adv. Mater. 13 (2001) 1487
4. Otten C.J., Lourie O.R., Yu M.F., Cowley J.M., Dyer M.J., Ruoff R.S., and Buhro W.E. J. Am. Chem. Soc. 124 (2002) 4564
5. Zhang H., Zhang Q., Tang J., and Qin L.C. J. Am. Chem. Soc. 127 (2005) 8002
6. Lourie O.R., Jones C.R., Bartlett B.M., Gibbons P.C., Ruoff R.S., and Buhro W.E. Chem. Mater. 12 (2000) 1808
7. Chopra N.G., Luyken R.J., Cherrey K., Crespi V.H., Cohen M.L., Louie S.G., and Zettle A. Science 269 (1995) 966
8. Krishnarao R.V., and Subrahmanyam J. J. Mater. Sci. 39 (2004) 6263
9. Carlsson M., Carcia-Carcia F.J., and Johnson M. J. Cryst. Growth 236 (2002) 466
10. Zhang H.Z., Wang R.M., You L.P., Yu J., Chen H., Yu D.P., and Chen Y. New J. Phys. 9 (2007) 13
11. Wei J.Q., Jiang B., Li Y.H., Xu C.L., Wu D.H., and Wei B.Q. J. Mater. Chem. 12 (2002) 3121
12. Han W.Q. Appl. Phys. Lett. 88 (2006) 133118
13. Boustani I., Quandt A., Hernández E., and Rubio A. J. Chem. Phys. 110 (1999) 3176
14. Dai H., Wong E., Lu Y., Fan S., and Lieber C.M. Nature 375 (1995) 769
15. Han W.Q., Bando Y., Kurashima K., and Sato T. Chem. Phys. Lett. 299 (1999) 368
16. Mcllroy D.N., Zhang D.Q., Cohen R.M., Wharton J., Geng Y.J., Norton M.R., De Stasió G., Gilbert B., Perfetti L., Streiff J.H., Broocks B., and McHale J.L. Phys. Rev. B 60 (1999) 4874
17. Ma R., and Bando Y. Chem. Mater. 14 (2002) 4403
18. Zhang Y.J., Ago H., Yumura M., Ohshima S., Uchida K., Komatsu T., and Iijima S. Chem. Phys. Lett. 385 (2004) 177
19. Walker Jr. P.L., Shele M., and Anderson R.A. In: Walker Jr. P.L. (Ed). Chemistry and Physics of Carbon vol. 4 (1968), Marcel Dekker Inc., New York 287
20. Gallagher J.T., and Harker H. Carbon 2 (1964) 163
21. Mckee D.W. Carbon 12 (1974) 453