A facile route to prepare boron nitride hollow particles at 450 °C

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3682-3686

  Sun, Changhui ^a   Guo, Chunli ^a   Ma, Xiaojian ^a   Xu, Liqiang ^a   Qian, Yitai ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

A1. Crystal morphology; A1. Nanostructures; B1. Nanomaterials; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A1. CRYSTAL MORPHOLOGY; A1. NANOSTRUCTURES; B1. NANOMATERIALS; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS;

BORON; GRAVIMETRIC ANALYSIS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; HYDROGEN STORAGE; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NITRIDES; SEMICONDUCTOR GROWTH; SODIUM; SUGAR (SUCROSE); X RAY DIFFRACTION;

BORON NITRIDE;

EID: 67649844227     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.05.019     Document Type: Article

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