A new piezoelectric single crystal obtained by Ge doping in the SiO 2 structure

Crystal Research and Technology

Volumn 44, Issue 6, 2009, Pages 577-580

  Miclau, M ^a   Miclau, N ^b   Poienar, M ^a   Grozescu, I ^a  

^a National Institute of Research for Electrochemistry and Condensed Matter   (Romania)

^b POLITEHNICA UNIVERSITY OF TIMISOARA   (Romania)

Author keywords

Alpha quartz; Hydrothermal; Piezoelectric

Indexed keywords

ALPHA-QUARTZ; CHEMICAL COMPOSITIONS; ELECTROMECHANICAL COEFFICIENTS; ELECTRON MICROPROBE ANALYSIS; GE-DOPING; HYDROTHERMAL; HYDROTHERMAL CONDITIONS; HYDROTHERMAL METHODS; NI ALLOYS; PIEZOELECTRIC; PIEZOELECTRIC PROPERTY; PIEZOELECTRIC SINGLE CRYSTALS; QUARTZ STRUCTURE; TEMPERATURE GRADIENT;

ATOMIC FORCE MICROSCOPY; BOILERS; CHROMIUM; CHROMIUM ALLOYS; CRYSTAL STRUCTURE; ELECTRON PROBE MICROANALYSIS; GERMANIUM; MATERIALS PROPERTIES; NUTRIENTS; OXIDE MINERALS; PHASE TRANSITIONS; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; PRESSURE VESSELS; QUARTZ; SILICON ALLOYS; SILICON COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

SINGLE CRYSTALS;

EID: 67649802946     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200900032     Document Type: Article

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