SCOPUS 정보 검색 플랫폼

Volumn 105, Issue 1, 2009, Pages

Ballistic electron transport in hybrid ferromagnet/two-dimensional electron gas sandwich nanostructure: Spin polarization and magnetoresistance effect

(4) Wang, Y a Chen, N F a,b Jiang, Y c Zhang, X W a

a INSTITUTE OF SEMICONDUCTORS (China)

b INSTITUTE OF MECHANICS (China)

c UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-SYMMETRIC; BALLISTIC ELECTRON TRANSPORT; ELECTROSTATIC BARRIERS; FERROMAGNETIC LAYERS; MAGNETIC STRIPES; MAGNETIC-ELECTRIC BARRIER; MAGNETOCONDUCTANCE; MAGNETORESISTANCE EFFECTS; MODULATION-DOPED; NUMERICAL RESULTS; OPTIMAL VALUES; SEMICONDUCTOR HETEROSTRUCTURES; STRAY FIELD;

BALLISTICS; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MODULATION; SPIN POLARIZATION;

SPIN DYNAMICS;

EID: 67649783349 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3041477 Document Type: Article

Times cited : (27)

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